SK hynix develops high-capacity DDR4 module

By 신용배
  • Published : Apr 7, 2014 - 10:19
  • Updated : Apr 7, 2014 - 10:19

SK hynix Inc., South Korea's No. 2 chipmaker, said Monday it has developed the industry's most advanced double data rate-4 (DDR4) module with a capacity of 128 gigabytes (GB), significantly improving speed and efficiency.

Based on the 8-gigabit(Gb)-DDR4, SK said it expanded the maximum capacity by two-fold from the previous model of 64GB with the Through Silicon Via (TSV) technology, which allows the dynamic random-access memory (DRAM) to be connected with higher electrical efficiency.

The module has a speed of 2,133 megabits per second (Mbps), compared with the 1,333 Mbps of DDR3, and consumes less power by working on the 1.2 voltage, compared with the 1.35 voltage of its predecessor.

 "The development of the world's first 128GB DDR4 module has its significance in opening ultrahigh density server market," said SK's Senior Vice President Hong Sung-joo, adding it will further strengthen its competitiveness in premium DRAM sector.

Citing data compiled by market researcher Gartner, SK said the market for server DRAM will expand 37 percent on average on-year through 2018, with DDR4 models becoming a key product in the industry after 2016.

 SK said it plans to commence the mass production of the model by the first half of 2015. (Yonhap)