SEOUL, Sept. 15 (Yonhap) -- Samsung Electronics Co., the world's largest memory chipmaker, said Thursday that it has developed a new low-powered dynamic random access memory (DRAM) chips based on the 30-nanometer class technology.

The 16-gigabyte, DDR3 Registered Dual Inline Memory Module (RDIMM) for 1.25-volt corporate servers is scheduled to be unveiled to the public at an industry forum to be held in Singapore on Thursday, Samsung said in a statement.

The latest DRAM device represents Samsung's push to expand the environmentally friendly, power-efficient semiconductors, it said.

The Korean chip giant rolled out the industry's first 40-nanometer class DDR DRAM in 2009 for 1.35-volt servers.

The new memory device cuts electricity consumption by 15 percent compared with existing models, Samsung said.

Compared with devices for 1.35-volt servers based on the 40-nanometer class, the new device consumes less than half of the electricity. 

Samsung expects high demand for such chips as more companies are building data centers. The company said that it will roll out 4-gigabyte, 8-gigabyte and 16-gigabyte RDIMM as well.